JPH0440319B2 - - Google Patents
Info
- Publication number
- JPH0440319B2 JPH0440319B2 JP7437385A JP7437385A JPH0440319B2 JP H0440319 B2 JPH0440319 B2 JP H0440319B2 JP 7437385 A JP7437385 A JP 7437385A JP 7437385 A JP7437385 A JP 7437385A JP H0440319 B2 JPH0440319 B2 JP H0440319B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor thin
- deflection
- speed
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 4
- 238000000137 annealing Methods 0.000 description 22
- 239000010408 film Substances 0.000 description 18
- 238000009826 distribution Methods 0.000 description 14
- 239000010410 layer Substances 0.000 description 13
- 238000010894 electron beam technology Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 5
- 238000004220 aggregation Methods 0.000 description 4
- 230000002776 aggregation Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7437385A JPS61236677A (ja) | 1985-04-10 | 1985-04-10 | 半導体薄膜結晶層の製造方法 |
| US06/762,374 US4662949A (en) | 1985-02-15 | 1985-08-05 | Method of forming a single crystal semiconductor layer from a non-single crystalline material by a shaped energy beam |
| US06/904,942 US4746803A (en) | 1985-02-15 | 1986-09-08 | Method of forming a single crystal semiconductor layer from a non-single-crystalline material and apparatus for forming the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7437385A JPS61236677A (ja) | 1985-04-10 | 1985-04-10 | 半導体薄膜結晶層の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61236677A JPS61236677A (ja) | 1986-10-21 |
| JPH0440319B2 true JPH0440319B2 (en]) | 1992-07-02 |
Family
ID=13545300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7437385A Granted JPS61236677A (ja) | 1985-02-15 | 1985-04-10 | 半導体薄膜結晶層の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61236677A (en]) |
-
1985
- 1985-04-10 JP JP7437385A patent/JPS61236677A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61236677A (ja) | 1986-10-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |